CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  4A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 20V 4A (TA) 1W (TA) SURFACE MOUNT TSMT3

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.5V, 4.5V

ENVIRONMENTAL INFORMATION:  TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOTSMT3 CONSTITUTION MATERIAL LISTRUR040N02 ESD DATA

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  8NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  680PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  RUR040N02TL

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  SC-96

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1W (TA)

RDS ON (MAX) @ ID, VGS:  35 MOHM @ 4A, 4.5V

SIMULATION MODELS:  RUR040N02 SPICE MODELRUR040N02 THERMAL MODEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  TSMT3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±10V

VGS(TH) (MAX) @ ID:  1.3V @ 1MA