CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  200MA (TA)

DETAILED DESCRIPTION:  N-CHANNEL 50V 200MA (TA) 350MW (TC) SURFACE MOUNT SST3

DRAIN TO SOURCE VOLTAGE (VDSS):  50V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V

ENVIRONMENTAL INFORMATION:  TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOSST3 CONSTITUTION MATERIAL LISTRYC002N05 ESD DATA

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  26PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  RYC002N05T316

MANUFACTURER STANDARD LEAD TIME:  10 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  350MW (TC)

RDS ON (MAX) @ ID, VGS:  2.2 OHM @ 200MA, 4.5V

SIMULATION MODELS:  RYC002N05 SPICE MODELRYC002N05 THERMAL MODEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SST3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±8V

VGS(TH) (MAX) @ ID:  800MV @ 1MA