CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  22A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 1200V 22A (TC) 165W (TC) THROUGH HOLE TO-247

DRAIN TO SOURCE VOLTAGE (VDSS):  1200V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  18V

ENVIRONMENTAL INFORMATION:  SIC LEVEL 1 MSLSIC WHISKER INFOTO-247 MOS CONSTITUTION MATERIAL LISTSCT2160KE ESD DATA

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  62NC @ 18V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1200PF @ 800V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  SCT2160KEC

MANUFACTURER STANDARD LEAD TIME:  32 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  175°C (TJ)

PACKAGE / CASE:  TO-247-3

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  165W (TC)

RDS ON (MAX) @ ID, VGS:  208 MOHM @ 7A, 18V

SIMULATION MODELS:  SCT2160KE SPICE MODELSCT2160KE THERMAL MODEL

STANDARD PACKAGE:  360

SUPPLIER DEVICE PACKAGE:  TO-247

TECHNOLOGY:  SICFET (SILICON CARBIDE)

VGS (MAX):  +22V, -6V

VGS(TH) (MAX) @ ID:  4V @ 2.5MA