CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  5.9A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 1700V 5.9A (TC) 57W (TC) SURFACE MOUNT TO-268

DRAIN TO SOURCE VOLTAGE (VDSS):  1700V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  18V

ENVIRONMENTAL INFORMATION:  SIC LEVEL 1 MSLSIC WHISKER INFOSCT2H12NY ESD DATA

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  17NC @ 18V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  275PF @ 800V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  SCT2750NYTB

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  175°C (TJ)

PACKAGE / CASE:  TO-268-3, D³PAK (2 LEADS + TAB), TO-268AA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  57W (TC)

RDS ON (MAX) @ ID, VGS:  975 MOHM @ 1.7A, 18V

SIMULATION MODELS:  SCT2750NY SPICE MODELSCT2750NY THERMAL MODEL

STANDARD PACKAGE:  400

SUPPLIER DEVICE PACKAGE:  TO-268

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  +22V, -6V

VGS(TH) (MAX) @ ID:  4V @ 630ΜA