ADDITIONAL FEATURE:  DIGITAL, BUILT IN BIAS RESISTOR

COLLECTOR CURRENT-MAX (IC):  100 MA

COLLECTOR-EMITTER VOLTAGE-MAX:  50 V

CONFIGURATION:  COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

DC CURRENT GAIN-MIN (HFE):  80

JESD-30 CODE:  R-PDSO-G5

JESD-609 CODE:  E3/E2

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  UMG8TR

NUMBER OF ELEMENTS:  2

NUMBER OF TERMINALS:  5

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G5

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PEAK REFLOW TEMPERATURE (CEL):  260

POLARITY/CHANNEL TYPE:  NPN

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN/TIN COPPER

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  10

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON