ADDITIONAL FEATURE:  DIGITAL, BUILT IN BIAS RESISTOR

COLLECTOR CURRENT-MAX (IC):  30 MA

COLLECTOR-EMITTER VOLTAGE-MAX:  50 V

CONFIGURATION:  SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

DC CURRENT GAIN-MIN (HFE):  68

JESD-30 CODE:  R-PDSO-G6

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  UMH2TN

NUMBER OF ELEMENTS:  2

NUMBER OF TERMINALS:  6

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G6

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PIN COUNT:  6

POLARITY/CHANNEL TYPE:  NPN

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  YES

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON