BASE PART NUMBER:  *MZ1

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  150MA

CURRENT - COLLECTOR CUTOFF (MAX):  100NA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  120 @ 1MA, 6V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR ARRAY NPN, PNP 50V 150MA 180MHZ, 140MHZ 150MW SURFACE MOUNT UMT6

ENVIRONMENTAL INFORMATION:  TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOUMT6 CONSTITUTION MATERIAL LISTUMZ1N ESD DATA

FREQUENCY - TRANSITION:  180MHZ, 140MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  UMZ1NTR

MANUFACTURER STANDARD LEAD TIME:  10 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  6-TSSOP, SC-88, SOT-363

PACKAGING:  REEL

POWER - MAX:  150MW

SIMULATION MODELS:  UMZ1N SPICE MODELUMZ1N THERMAL MODEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  UMT6

TRANSISTOR TYPE:  NPN, PNP

VCE SATURATION (MAX) @ IB, IC:  400MV @ 5MA, 50MA / 500MV @ 5MA, 50MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V