BASE PART NUMBER:  *J11

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  1.3A

DETAILED DESCRIPTION:  MOSFET ARRAY 2 P-CHANNEL (DUAL) 12V 1.3A 320MW SURFACE MOUNT UMT6

DRAIN TO SOURCE VOLTAGE (VDSS):  12V

ENVIRONMENTAL INFORMATION:  TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOUS6J11 ESD DATATUMT6 CONSTITUTION MATERIAL LIST

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  2 P-CHANNEL (DUAL)

GATE CHARGE (QG) (MAX) @ VGS:  2.4NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  290PF @ 6V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  US6J11TR

MANUFACTURER STANDARD LEAD TIME:  10 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  6-TSSOP, SC-88, SOT-363

PACKAGING:  REEL

POWER - MAX:  320MW

RDS ON (MAX) @ ID, VGS:  260 MOHM @ 1.3A, 4.5V

SIMULATION MODELS:  US6J11 SPICE MODELUS6J11 THERMAL MODEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  UMT6

VGS(TH) (MAX) @ ID:  1V @ 1MA