BASE PART NUMBER:  6M1

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  1.4A, 1A

DETAILED DESCRIPTION:  MOSFET ARRAY N AND P-CHANNEL 30V, 20V 1.4A, 1A 1W SURFACE MOUNT TUMT6

DRAIN TO SOURCE VOLTAGE (VDSS):  30V, 20V

ENVIRONMENTAL INFORMATION:  TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOUS6M1 ESD DATATUMT6 CONSTITUTION MATERIAL LIST

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  N AND P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  2NC @ 5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  70PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  US6M1TR

MANUFACTURER STANDARD LEAD TIME:  10 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  6-SMD, FLAT LEADS

PACKAGING:  REEL

POWER - MAX:  1W

RDS ON (MAX) @ ID, VGS:  240 MOHM @ 1.4A, 10V

SIMULATION MODELS:  US6M1 SPICE MODELUS6M1 THERMAL MODEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  TUMT6

VGS(TH) (MAX) @ ID:  2.5V @ 1MA