CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  100MA

DETAILED DESCRIPTION:  MOSFET ARRAY N AND P-CHANNEL 20V 100MA 120MW SURFACE MOUNT VMT6

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

ENVIRONMENTAL INFORMATION:  TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOVT6M1 ESD DATAVMT6-HF CONSTITUTION MATERIAL LIST

FET FEATURE:  LOGIC LEVEL GATE, 1.2V DRIVE

FET TYPE:  N AND P-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  7.1PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  VT6M1T2CR

MANUFACTURER STANDARD LEAD TIME:  17 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  6-SMD, FLAT LEADS

PACKAGING:  REEL

POWER - MAX:  120MW

RDS ON (MAX) @ ID, VGS:  3.5 OHM @ 100MA, 4.5V

SIMULATION MODELS:  VT6M1 SPICE MODELVT6M1 THERMAL MODEL

STANDARD PACKAGE:  8,000

SUPPLIER DEVICE PACKAGE:  VMT6

VGS(TH) (MAX) @ ID:  1V @ 100ΜA