ACCESS MODE:  FOUR BANK PAGE BURST

ACCESS TIME-MAX:  5.4 NS

ADDITIONAL FEATURE:  AUTO/SELF REFRESH

CLOCK FREQUENCY-MAX (FCLK):  133 MHZ

I/O TYPE:  COMMON

INTERLEAVED BURST LENGTH:  1,2,4,8

JESD-30 CODE:  R-PBGA-B54

JESD-609 CODE:  E3

LENGTH:  11 MM

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  K4M561633G-BN75

MEMORY DENSITY:  268.4355 MBIT

MEMORY IC TYPE:  SYNCHRONOUS DRAM

MEMORY WIDTH:  16

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF FUNCTIONS:  1

NUMBER OF PORTS:  1

NUMBER OF TERMINALS:  54

NUMBER OF WORDS:  16.7772 M

NUMBER OF WORDS CODE:  16000000

OPERATING MODE:  SYNCHRONOUS

OPERATING TEMPERATURE-MAX:  85 °C

OPERATING TEMPERATURE-MIN:  -25 °C

ORGANIZATION:  16MX16

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  VFBGA

PACKAGE DESCRIPTION:  VFBGA, BGA54,9X9,32

PACKAGE EQUIVALENCE CODE:  BGA54,9X9,32

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  225

POWER SUPPLIES:  3/3.3 V

QUALIFICATION STATUS:  NOT QUALIFIED

REFRESH CYCLES:  8192

SEATED HEIGHT-MAX:  1 MM

SEQUENTIAL BURST LENGTH:  1,2,4,8,FP

STANDBY CURRENT-MAX:  1 MA

SUBCATEGORY:  DRAMS

SUPPLY CURRENT-MAX:  120 ΜA

SUPPLY VOLTAGE-MAX (VSUP):  3.6 V

SUPPLY VOLTAGE-MIN (VSUP):  2.7 V

SUPPLY VOLTAGE-NOM (VSUP):  3 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  OTHER

TERMINAL FINISH:  MATTE TIN

TERMINAL FORM:  BALL

TERMINAL PITCH:  800 ΜM

TERMINAL POSITION:  BOTTOM

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

WIDTH:  8 MM