ACCESS TIME-MAX:  5.4 NS

CLOCK FREQUENCY-MAX (FCLK):  133 MHZ

I/O TYPE:  COMMON

INTERLEAVED BURST LENGTH:  1,2,4,8

JESD-30 CODE:  R-PBGA-B90

JESD-609 CODE:  E3

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  K4M563233G-HN75

MEMORY DENSITY:  268.4355 MBIT

MEMORY IC TYPE:  SYNCHRONOUS DRAM

MEMORY WIDTH:  32

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF TERMINALS:  90

NUMBER OF WORDS:  8.3886 M

NUMBER OF WORDS CODE:  8000000

OPERATING TEMPERATURE-MAX:  85 °C

OPERATING TEMPERATURE-MIN:  -25 °C

ORGANIZATION:  8MX32

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  FBGA

PACKAGE DESCRIPTION:  FBGA, BGA90,9X15,32

PACKAGE EQUIVALENCE CODE:  BGA90,9X15,32

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  GRID ARRAY, FINE PITCH

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  225

POWER SUPPLIES:  3/3.3 V

QUALIFICATION STATUS:  NOT QUALIFIED

REFRESH CYCLES:  4096

SEQUENTIAL BURST LENGTH:  1,2,4,8,FP

STANDBY CURRENT-MAX:  1 MA

SUBCATEGORY:  DRAMS

SUPPLY CURRENT-MAX:  160 ΜA

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  OTHER

TERMINAL FINISH:  MATTE TIN

TERMINAL FORM:  BALL

TERMINAL PITCH:  800 ΜM

TERMINAL POSITION:  BOTTOM

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED