ACCESS TIME-MAX:  32 NS

I/O TYPE:  COMMON

JESD-30 CODE:  R-PBGA-B92

JESD-609 CODE:  E1

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  K4R761869A-GCT9

MEMORY DENSITY:  603.9798 MBIT

MEMORY IC TYPE:  RAMBUS DRAM

MEMORY WIDTH:  18

MOISTURE SENSITIVITY LEVEL:  3

NUMBER OF TERMINALS:  92

NUMBER OF WORDS:  33.5544 M

NUMBER OF WORDS CODE:  32000000

OPERATING TEMPERATURE-MIN:  0 °C

ORGANIZATION:  32MX18

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  FBGA

PACKAGE DESCRIPTION:  FBGA, BGA92,10X18,32

PACKAGE EQUIVALENCE CODE:  BGA92,10X18,32

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  GRID ARRAY, FINE PITCH

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

POWER SUPPLIES:  1.8/2.5,2.5 V

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  DRAMS

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TERMINAL FINISH:  TIN SILVER COPPER

TERMINAL FORM:  BALL

TERMINAL PITCH:  800 ΜM

TERMINAL POSITION:  BOTTOM

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  40