ACCESS MODE:  FOUR BANK PAGE BURST

ACCESS TIME-MAX:  5.4 NS

ADDITIONAL FEATURE:  AUTO/SELF REFRESH

CLOCK FREQUENCY-MAX (FCLK):  133 MHZ

I/O TYPE:  COMMON

INTERLEAVED BURST LENGTH:  1,2,4,8

JESD-30 CODE:  R-PDSO-G54

LENGTH:  22.22 MM

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  K4S560832N-LC75

MEMORY DENSITY:  268.4355 MBIT

MEMORY IC TYPE:  SYNCHRONOUS DRAM

MEMORY WIDTH:  8

MOISTURE SENSITIVITY LEVEL:  3

NUMBER OF FUNCTIONS:  1

NUMBER OF PORTS:  1

NUMBER OF TERMINALS:  54

NUMBER OF WORDS:  33.5544 M

NUMBER OF WORDS CODE:  32000000

OPERATING MODE:  SYNCHRONOUS

OPERATING TEMPERATURE-MAX:  70 °C

OPERATING TEMPERATURE-MIN:  0 °C

ORGANIZATION:  32MX8

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  TSOP2

PACKAGE DESCRIPTION:  TSOP2, TSOP54,.46,32

PACKAGE EQUIVALENCE CODE:  TSOP54,.46,32

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE, THIN PROFILE

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

POWER SUPPLIES:  3.3 V

QUALIFICATION STATUS:  NOT QUALIFIED

REFRESH CYCLES:  8192

SEATED HEIGHT-MAX:  1.2 MM

SEQUENTIAL BURST LENGTH:  1,2,4,8,FP

STANDBY CURRENT-MAX:  2 MA

SUBCATEGORY:  DRAMS

SUPPLY CURRENT-MAX:  40 ΜA

SUPPLY VOLTAGE-MAX (VSUP):  3.6 V

SUPPLY VOLTAGE-MIN (VSUP):  3 V

SUPPLY VOLTAGE-NOM (VSUP):  3.3 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  COMMERCIAL

TERMINAL FORM:  GULL WING

TERMINAL PITCH:  800 ΜM

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

WIDTH:  10.16 MM