ACCESS TIME-MAX:  400 PS

CLOCK FREQUENCY-MAX (FCLK):  400 MHZ

I/O TYPE:  COMMON

INTERLEAVED BURST LENGTH:  4,8

JESD-30 CODE:  R-PBGA-B84

JESD-609 CODE:  E1

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  K4T51163QG-HCE7

MEMORY DENSITY:  536.8709 MBIT

MEMORY IC TYPE:  DDR DRAM

MEMORY WIDTH:  16

MOISTURE SENSITIVITY LEVEL:  3

NUMBER OF TERMINALS:  84

NUMBER OF WORDS:  33.5544 M

NUMBER OF WORDS CODE:  32000000

OPERATING TEMPERATURE-MAX:  95 °C

OPERATING TEMPERATURE-MIN:  0 °C

ORGANIZATION:  32MX16

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  FBGA

PACKAGE DESCRIPTION:  FBGA, BGA84,9X15,32

PACKAGE EQUIVALENCE CODE:  BGA84,9X15,32

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  GRID ARRAY, FINE PITCH

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

POWER SUPPLIES:  1.8 V

QUALIFICATION STATUS:  NOT QUALIFIED

REFRESH CYCLES:  8192

SEQUENTIAL BURST LENGTH:  4,8

STANDBY CURRENT-MAX:  8 MA

SUBCATEGORY:  DRAMS

SUPPLY CURRENT-MAX:  275 ΜA

SUPPLY VOLTAGE-NOM (VSUP):  1.8 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  OTHER

TERMINAL FINISH:  TIN/SILVER/COPPER (SN97.0AG2.5CU0.5)

TERMINAL FORM:  BALL

TERMINAL PITCH:  800 ΜM

TERMINAL POSITION:  BOTTOM

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED