ACCESS TIME-MAX:  55 NS

I/O TYPE:  COMMON

JESD-30 CODE:  R-PDSO-G28

JESD-609 CODE:  E3

LENGTH:  18.29 MM

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  K6X0808C1D-BF55

MEMORY DENSITY:  262.144 KBIT

MEMORY IC TYPE:  STANDARD SRAM

MEMORY WIDTH:  8

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF FUNCTIONS:  1

NUMBER OF TERMINALS:  28

NUMBER OF WORDS:  32.768 K

NUMBER OF WORDS CODE:  32000

OPERATING MODE:  ASYNCHRONOUS

OPERATING TEMPERATURE-MAX:  85 °C

OPERATING TEMPERATURE-MIN:  -40 °C

ORGANIZATION:  32KX8

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  SOP

PACKAGE DESCRIPTION:  SOP, SOP28,.45

PACKAGE EQUIVALENCE CODE:  SOP28,.45

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PARALLEL/SERIAL:  PARALLEL

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  225

POWER SUPPLIES:  5 V

QUALIFICATION STATUS:  NOT QUALIFIED

SEATED HEIGHT-MAX:  3 MM

STANDBY CURRENT-MAX:  10 ΜA

STANDBY VOLTAGE-MIN:  2 V

SUBCATEGORY:  SRAMS

SUPPLY CURRENT-MAX:  25 ΜA

SUPPLY VOLTAGE-MAX (VSUP):  5.5 V

SUPPLY VOLTAGE-MIN (VSUP):  4.5 V

SUPPLY VOLTAGE-NOM (VSUP):  5 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  INDUSTRIAL

TERMINAL FINISH:  MATTE TIN

TERMINAL FORM:  GULL WING

TERMINAL PITCH:  1.27 MM

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

WIDTH:  8.38 MM