ACCESS TIME-MAX:  20 NS

ADDITIONAL FEATURE:  CONTAINS ADDITIONAL 64M BIT NAND FLASH

JESD-30 CODE:  R-PDSO-G48

LENGTH:  18.4 MM

MANUFACTURER:  SAMSUNG ELECTRO-MECHANICS

MANUFACTURER PART NUMBER:  K9F2G08U0B-PCB00

MEMORY DENSITY:  2.1475 GBIT

MEMORY IC TYPE:  FLASH

MEMORY WIDTH:  8

NUMBER OF FUNCTIONS:  1

NUMBER OF TERMINALS:  48

NUMBER OF WORDS:  268.4355 M

NUMBER OF WORDS CODE:  256000000

OPERATING MODE:  ASYNCHRONOUS

OPERATING TEMPERATURE-MAX:  70 °C

OPERATING TEMPERATURE-MIN:  0 °C

ORGANIZATION:  256MX8

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  TSOP1

PACKAGE DESCRIPTION:  TSOP1,

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE, THIN PROFILE

PARALLEL/SERIAL:  PARALLEL

PART PACKAGE CODE:  TSOP1

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  48

PROGRAMMING VOLTAGE:  3.3 V

QUALIFICATION STATUS:  NOT QUALIFIED

SEATED HEIGHT-MAX:  1.2 MM

SUPPLY VOLTAGE-MAX (VSUP):  3.6 V

SUPPLY VOLTAGE-MIN (VSUP):  2.7 V

SUPPLY VOLTAGE-NOM (VSUP):  3.3 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  COMMERCIAL

TERMINAL FORM:  GULL WING

TERMINAL PITCH:  500 ΜM

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

WIDTH:  12 MM