ACCESS TIME-MAX:  30 NS

COMMAND USER INTERFACE:  YES

DATA POLLING:  NO

JESD-30 CODE:  R-PBGA-B63

JESD-609 CODE:  E3

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  K9F5608U0C-JIB0

MEMORY DENSITY:  268.4355 MBIT

MEMORY IC TYPE:  FLASH

MEMORY WIDTH:  8

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF SECTORS/SIZE:  2K

NUMBER OF TERMINALS:  63

NUMBER OF WORDS:  33.5544 M

NUMBER OF WORDS CODE:  32000000

OPERATING TEMPERATURE-MAX:  85 °C

OPERATING TEMPERATURE-MIN:  -40 °C

ORGANIZATION:  32MX8

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  FBGA

PACKAGE DESCRIPTION:  FBGA, BGA63,10X12,32

PACKAGE EQUIVALENCE CODE:  BGA63,10X12,32

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  GRID ARRAY, FINE PITCH

PAGE SIZE:  512 WORDS

PARALLEL/SERIAL:  PARALLEL

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  225

POWER SUPPLIES:  3.3 V

QUALIFICATION STATUS:  NOT QUALIFIED

READY/BUSY:  YES

SECTOR SIZE:  16K

STANDBY CURRENT-MAX:  50 ΜA

SUBCATEGORY:  FLASH MEMORIES

SUPPLY CURRENT-MAX:  20 ΜA

SUPPLY VOLTAGE-NOM (VSUP):  3.3 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  INDUSTRIAL

TERMINAL FINISH:  MATTE TIN

TERMINAL FORM:  BALL

TERMINAL PITCH:  800 ΜM

TERMINAL POSITION:  BOTTOM

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TOGGLE BIT:  NO

TYPE:  NAND TYPE