ACCESS TIME-MAX:  150 NS

I/O TYPE:  COMMON

JESD-30 CODE:  R-PQCC-J18

JESD-609 CODE:  E0

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  KM41464AJ-15

MEMORY DENSITY:  262.144 KBIT

MEMORY IC TYPE:  PAGE MODE DRAM

MEMORY WIDTH:  4

MOISTURE SENSITIVITY LEVEL:  3

NUMBER OF TERMINALS:  18

NUMBER OF WORDS:  65.536 K

NUMBER OF WORDS CODE:  64000

OPERATING TEMPERATURE-MAX:  70 °C

OPERATING TEMPERATURE-MIN:  0 °C

ORGANIZATION:  64KX4

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  QCCJ

PACKAGE DESCRIPTION:  QCCJ, LDCC18,.33X.53

PACKAGE EQUIVALENCE CODE:  LDCC18,.33X.53

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  CHIP CARRIER

PBFREE CODE:  NO

PEAK REFLOW TEMPERATURE (CEL):  260

POWER SUPPLIES:  5 V

QUALIFICATION STATUS:  NOT QUALIFIED

REFRESH CYCLES:  256

SUBCATEGORY:  DRAMS

SUPPLY CURRENT-MAX:  65 ΜA

SUPPLY VOLTAGE-NOM (VSUP):  5 V

SURFACE MOUNT:  YES

TECHNOLOGY:  MOS

TEMPERATURE GRADE:  COMMERCIAL

TERMINAL FINISH:  TIN/LEAD (SN/PB)

TERMINAL FORM:  J BEND

TERMINAL PITCH:  1.27 MM

TERMINAL POSITION:  QUAD

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  40