ACCESS TIME-MAX:  100 NS

I/O TYPE:  COMMON

JESD-30 CODE:  R-PDIP-T20

JESD-609 CODE:  E0

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  KM44C256AP-10

MEMORY DENSITY:  1.0486 MBIT

MEMORY IC TYPE:  FAST PAGE DRAM

MEMORY WIDTH:  4

MOISTURE SENSITIVITY LEVEL:  3

NUMBER OF TERMINALS:  20

NUMBER OF WORDS:  262.144 K

NUMBER OF WORDS CODE:  256000

OPERATING TEMPERATURE-MAX:  70 °C

OPERATING TEMPERATURE-MIN:  0 °C

ORGANIZATION:  256KX4

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  DIP

PACKAGE DESCRIPTION:  DIP, DIP20,.3

PACKAGE EQUIVALENCE CODE:  DIP20,.3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  IN-LINE

PBFREE CODE:  NO

PEAK REFLOW TEMPERATURE (CEL):  260

POWER SUPPLIES:  5 V

QUALIFICATION STATUS:  NOT QUALIFIED

REFRESH CYCLES:  512

STANDBY CURRENT-MAX:  1 MA

SUBCATEGORY:  DRAMS

SUPPLY CURRENT-MAX:  65 ΜA

SUPPLY VOLTAGE-NOM (VSUP):  5 V

SURFACE MOUNT:  NO

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  COMMERCIAL

TERMINAL FINISH:  TIN/LEAD (SN/PB)

TERMINAL FORM:  THROUGH-HOLE

TERMINAL PITCH:  2.54 MM

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  40