ADDITIONAL FEATURE:  LOGIC LEVEL COMPATIBLE

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  50 V

DRAIN CURRENT-MAX (ID):  1.1 A

DRAIN-SOURCE ON RESISTANCE-MAX:  800 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PDSO-G4

MANUFACTURER:  SIEMENS

MANUFACTURER PART NUMBER:  BSP315E6327

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  4

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G4

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  SOT-223

PIN COUNT:  4

POLARITY/CHANNEL TYPE:  P-CHANNEL

PULSED DRAIN CURRENT-MAX (IDM):  4.4 A

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  YES

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TRANSISTOR ELEMENT MATERIAL:  SILICON