ADDITIONAL FEATURE:  AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

AVALANCHE ENERGY RATING (EAS):  35 MJ

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  50 V

DRAIN CURRENT-MAX (ID):  17.5 A

DRAIN-SOURCE ON RESISTANCE-MAX:  100 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

FEEDBACK CAP-MAX (CRSS):  90 PF

JEDEC-95 CODE:  TO-220AB

JESD-30 CODE:  R-PSFM-T3

MANUFACTURER:  SIEMENS

MANUFACTURER PART NUMBER:  BUZ104L

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  175 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  FLANGE MOUNT, R-PSFM-T3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  FLANGE MOUNT

PART PACKAGE CODE:  SFM

PIN COUNT:  3

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION AMBIENT-MAX:  60 W

PULSED DRAIN CURRENT-MAX (IDM):  70 A

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  NO

TERMINAL FORM:  THROUGH-HOLE

TERMINAL POSITION:  SINGLE

TRANSISTOR ELEMENT MATERIAL:  SILICON

TURN-OFF TIME-MAX (TOFF):  160 NS

TURN-ON TIME-MAX (TON):  93 NS