CONFIGURATION:  SINGLE

DS BREAKDOWN VOLTAGE-MIN:  200 V

DRAIN CURRENT-MAX (ID):  7 A

DRAIN-SOURCE ON RESISTANCE-MAX:  400 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PSIP-T3

MANUFACTURER:  SIEMENS

MANUFACTURER PART NUMBER:  SPU07N20

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  IN-LINE, R-PSIP-T3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  IN-LINE

POLARITY/CHANNEL TYPE:  N-CHANNEL

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  NO

TERMINAL FORM:  THROUGH-HOLE

TERMINAL POSITION:  SINGLE

TRANSISTOR ELEMENT MATERIAL:  SILICON