CLOCK FREQUENCY-MAX (FCLK):  20 MHZ

ENDURANCE:  100000 WRITE/ERASE CYCLES

JESD-30 CODE:  R-PDSO-G8

JESD-609 CODE:  E3

LENGTH:  4.9 MM

MANUFACTURER:  SILICON STORAGE TECHNOLOGY

MANUFACTURER PART NUMBER:  SST25VF010-20-4C-SAE

MEMORY DENSITY:  1.0486 MBIT

MEMORY IC TYPE:  EEPROM

MEMORY WIDTH:  1

NUMBER OF FUNCTIONS:  1

NUMBER OF TERMINALS:  8

NUMBER OF WORDS:  1.0486 M

NUMBER OF WORDS CODE:  1000000

OPERATING MODE:  SYNCHRONOUS

OPERATING TEMPERATURE-MAX:  70 °C

OPERATING TEMPERATURE-MIN:  0 °C

ORGANIZATION:  1MX1

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  SOP

PACKAGE DESCRIPTION:  SOP, SOP8,.25

PACKAGE EQUIVALENCE CODE:  SOP8,.25

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PARALLEL/SERIAL:  SERIAL

PART PACKAGE CODE:  SOIC

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

PIN COUNT:  8

POWER SUPPLIES:  3/3.3 V

QUALIFICATION STATUS:  NOT QUALIFIED

SEATED HEIGHT-MAX:  1.75 MM

SERIAL BUS TYPE:  SPI

STANDBY CURRENT-MAX:  400 ΜA

SUBCATEGORY:  FLASH MEMORIES

SUPPLY CURRENT-MAX:  30 ΜA

SUPPLY VOLTAGE-MAX (VSUP):  3.6 V

SUPPLY VOLTAGE-MIN (VSUP):  2.7 V

SUPPLY VOLTAGE-NOM (VSUP):  3 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  COMMERCIAL

TERMINAL FINISH:  MATTE TIN

TERMINAL FORM:  GULL WING

TERMINAL PITCH:  1.27 MM

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  24

TYPE:  NOR TYPE

WIDTH:  3.9 MM

WRITE PROTECTION:  HARDWARE/SOFTWARE