CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  14A (TA), 56A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 25V 14A (TA), 56A (TC) 2.7W (TA) SURFACE MOUNT 8-VSON (3.3X3.3)

DRAIN TO SOURCE VOLTAGE (VDSS):  25V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  3.8NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  570PF @ 12.5V

MANUFACTURER:  TEXAS INSTRUMENTS

MANUFACTURER PART NUMBER:  CSD16411Q3

MANUFACTURER STANDARD LEAD TIME:  35 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-POWERVDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2.7W (TA)

RDS ON (MAX) @ ID, VGS:  10 MOHM @ 10A, 10V

SERIES:  NEXFET?

SUPPLIER DEVICE PACKAGE:  8-VSON (3.3X3.3)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  +16V, -12V

VGS(TH) (MAX) @ ID:  2.3V @ 250ΜA