CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  20A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 30V 20A (TA) 3.2W (TA), 29W (TC) SURFACE MOUNT 8-VSONP (3X3.15)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  15NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  998PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  TEXAS INSTRUMENTS

MANUFACTURER PART NUMBER:  CSD17579Q3A

MANUFACTURER PRODUCT PAGE:  CSD17579Q3A SPECIFICATIONS

MANUFACTURER STANDARD LEAD TIME:  9 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-POWERVDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3.2W (TA), 29W (TC)

RDS ON (MAX) @ ID, VGS:  10.2 MOHM @ 8A, 10V

SERIES:  NEXFET?

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  8-VSONP (3X3.15)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  1.9V @ 250ΜA

ALTERNATE PARTS:  CSD17579Q3AT