CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  100A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 80V 100A (TA) 3.1W (TA), 195W (TC) SURFACE MOUNT 8-VSON-CLIP (5X6)

DRAIN TO SOURCE VOLTAGE (VDSS):  80V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  6V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  62NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  4870PF @ 40V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS COMPLIANT

MANUFACTURER:  TEXAS INSTRUMENTS

MANUFACTURER PART NUMBER:  CSD19502Q5B

MANUFACTURER PRODUCT PAGE:  CSD19502Q5B SPECIFICATIONS

MANUFACTURER STANDARD LEAD TIME:  28 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-POWERTDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3.1W (TA), 195W (TC)

RDS ON (MAX) @ ID, VGS:  4.1 MOHM @ 19A, 10V

SERIES:  NEXFET?

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  8-VSON-CLIP (5X6)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3.3V @ 250ΜA

ALTERNATE PARTS:  CSD19502Q5BT