CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  100A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 100V 100A (TA) 3.3W (TA), 125W (TC) SURFACE MOUNT 8-VSON (5X6)

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  6V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  48NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  3870PF @ 50V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  TEXAS INSTRUMENTS

MANUFACTURER PART NUMBER:  CSD19531Q5AT

MANUFACTURER PRODUCT PAGE:  CSD19531Q5AT SPECIFICATIONS

MANUFACTURER STANDARD LEAD TIME:  24 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-POWERTDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3.3W (TA), 125W (TC)

RDS ON (MAX) @ ID, VGS:  6.4 MOHM @ 16A, 10V

SERIES:  NEXFET?

STANDARD PACKAGE:  250

SUPPLIER DEVICE PACKAGE:  8-VSON (5X6)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3.3V @ 250ΜA

ALTERNATE PARTS:  CSD19531Q5A