CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  200A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 100V 200A (TA) 375W (TC) SURFACE MOUNT DDPAK/TO-263-3

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  6V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  153NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  12000PF @ 50V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS COMPLIANT

MANUFACTURER:  TEXAS INSTRUMENTS

MANUFACTURER PART NUMBER:  CSD19536KTTT

MANUFACTURER PRODUCT PAGE:  CSD19536KTTT SPECIFICATIONS

MANUFACTURER STANDARD LEAD TIME:  26 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  2 (1 YEAR)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-263-4, D²PAK (3 LEADS + TAB), TO-263AA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  375W (TC)

RDS ON (MAX) @ ID, VGS:  2.4 MOHM @ 100A, 10V

SERIES:  NEXFET?

STANDARD PACKAGE:  50

SUPPLIER DEVICE PACKAGE:  DDPAK/TO-263-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3.2V @ 250ΜA

ALTERNATE PARTS:  CSD19536KTT