CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  15A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 100V 15A (TA) 2.8W (TA), 23W (TC) SURFACE MOUNT 8-VSONP (3X3.15)

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  6V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  4.3NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  454PF @ 50V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  TEXAS INSTRUMENTS

MANUFACTURER PART NUMBER:  CSD19538Q3A

MANUFACTURER PRODUCT PAGE:  CSD19538Q3A SPECIFICATIONS

MANUFACTURER STANDARD LEAD TIME:  28 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-POWERVDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2.8W (TA), 23W (TC)

RDS ON (MAX) @ ID, VGS:  59 MOHM @ 5A, 10V

SERIES:  NEXFET?

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  8-VSONP (3X3.15)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3.8V @ 250ΜA

ALTERNATE PARTS:  CSD19538Q3AT