CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  1.6A (TA)

DETAILED DESCRIPTION:  P-CHANNEL 20V 1.6A (TA) 1W (TA) SURFACE MOUNT 4-DSBGA (1X1)

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  2.5V, 4.5V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  2.9NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  478PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  TEXAS INSTRUMENTS

MANUFACTURER PART NUMBER:  CSD25213W10

MANUFACTURER PRODUCT PAGE:  CSD25213W10 SPECIFICATIONS

MANUFACTURER STANDARD LEAD TIME:  21 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  4-UFBGA, DSBGA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1W (TA)

RDS ON (MAX) @ ID, VGS:  47 MOHM @ 1A, 4.5V

SERIES:  NEXFET?

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  4-DSBGA (1X1)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  -6V

VGS(TH) (MAX) @ ID:  1.1V @ 250ΜA