CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  20A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.8V, 4.5V

EXPANDED DESCRIPTION:  P-CHANNEL 20V 20A (TA) 2.9W (TA) SURFACE MOUNT 6-WSON (2X2)

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  4.7NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  655PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  TEXAS INSTRUMENTS

MANUFACTURER PART NUMBER:  CSD25310Q2

MANUFACTURER PRODUCT PAGE:  CSD25310Q2 SPECIFICATIONS

MANUFACTURER STANDARD LEAD TIME:  9 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  6-WDFN EXPOSED PAD

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2.9W (TA)

RDS ON (MAX) @ ID, VGS:  23.9 MOHM @ 5A, 4.5V

SERIES:  NEXFET?

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  6-WSON (2X2)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±8V

VGS(TH) (MAX) @ ID:  1.1V @ 250ΜA