CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  2.3A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  15V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  11.25NC @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  TEXAS INSTRUMENTS

MANUFACTURER PART NUMBER:  TPS1101DR

MANUFACTURER PRODUCT PAGE:  TPS1101DR SPECIFICATIONS

MANUFACTURER STANDARD LEAD TIME:  6 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -40°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  REEL

POWER DISSIPATION (MAX):  791MW (TA)

RDS ON (MAX) @ ID, VGS:  90 MOHM @ 2.5A, 10V

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  8-SOIC

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  1.5V @ 250ΜA