TPS1120DR

Factory Authorized Line

TEXAS INSTRUMENTS

Electronic Component

TPS1120DR

- FETs - Arrays 1.5V @ 250µA, 15V
Call for availability TEXAS INSTRUMENTS
Mfr Part # TPS1120DR
Qty in Stock Call for availability
Factory Stock N/A
Minimum Order 1
Packaging PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)PACKAGING:  REELSTANDARD PACKAGE:  2,500SUPPLIER DEVICE PACKAGE:  8-SOIC
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Availability

  • Qty in StockCall for availability
  • Min. Order Qty1
Specification

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  1.17A

DRAIN TO SOURCE VOLTAGE (VDSS):  15V

EXPANDED DESCRIPTION:  MOSFET ARRAY 2 P-CHANNEL (DUAL) 15V 1.17A 840MW SURFACE MOUNT 8-SOIC

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  2 P-CHANNEL (DUAL)

GATE CHARGE (QG) (MAX) @ VGS:  5.45NC @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  TEXAS INSTRUMENTS

MANUFACTURER PART NUMBER:  TPS1120DR

MANUFACTURER PRODUCT PAGE:  TPS1120DR SPECIFICATIONS

MANUFACTURER STANDARD LEAD TIME:  6 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -40°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  REEL

POWER - MAX:  840MW

RDS ON (MAX) @ ID, VGS:  180 MOHM @ 1.5A, 10V

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  8-SOIC

VGS(TH) (MAX) @ ID:  1.5V @ 250ΜA

ALTERNATE PARTS:  TPS1120D TPS1120DG4