CASE CONNECTION:  ISOLATED

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  200 V

DRAIN CURRENT-MAX (ID):  27.4 A

DRAIN-SOURCE ON RESISTANCE-MAX:  105 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  TO-254AA

JESD-30 CODE:  S-MSFM-P3

MANUFACTURER:  TT ELECTRONICS POWER AND HYBRID / SEMELAB LIMITED

MANUFACTURER PART NUMBER:  IRFM250

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  METAL

PACKAGE DESCRIPTION:  FLANGE MOUNT, S-MSFM-P3

PACKAGE SHAPE:  SQUARE

PACKAGE STYLE:  FLANGE MOUNT

PART PACKAGE CODE:  TO-254AA

PBFREE CODE:  NO

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  3

POLARITY/CHANNEL TYPE:  N-CHANNEL

PULSED DRAIN CURRENT-MAX (IDM):  110 A

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  NO

TERMINAL FORM:  PIN/PEG

TERMINAL POSITION:  SINGLE

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR ELEMENT MATERIAL:  SILICON