CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  990MA (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

EXPANDED DESCRIPTION:  N-CHANNEL 60V 990MA (TC) 725MW (TA), 6.25W (TC) THROUGH HOLE TO-205AF (TO-39)

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  50PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  2N6660JTXV02

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-205AD, TO-39-3 METAL CAN

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  725MW (TA), 6.25W (TC)

RDS ON (MAX) @ ID, VGS:  3 OHM @ 1A, 10V

STANDARD PACKAGE:  20

SUPPLIER DEVICE PACKAGE:  TO-205AF (TO-39)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  2V @ 1MA