CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  240MA (TA)

DETAILED DESCRIPTION:  N-CHANNEL 60V 240MA (TA) 350MW (TA) SURFACE MOUNT TO-236

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  0.6NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  21PF @ 5V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  2N7002E-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  22 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  350MW (TA)

RDS ON (MAX) @ ID, VGS:  3 OHM @ 250MA, 10V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  TO-236

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA