BASE PART NUMBER:  2N7002

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  115MA (TA)

DETAILED DESCRIPTION:  N-CHANNEL 60V 115MA (TA) 200MW (TA) SURFACE MOUNT TO-236

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  5V, 10V

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  50PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  2N7002-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  33 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  200MW (TA)

RDS ON (MAX) @ ID, VGS:  7.5 OHM @ 500MA, 10V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  TO-236

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA