CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  18A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  200V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  70NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1300PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  IRF640STRRPBF

MANUFACTURER STANDARD LEAD TIME:  11 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3.1W (TA), 130W (TC)

RDS ON (MAX) @ ID, VGS:  180 MOHM @ 11A, 10V

STANDARD PACKAGE:  800

SUPPLIER DEVICE PACKAGE:  TO-263 (D²PAK)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  4V @ 250ΜA