CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  1.7A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  900V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  38NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  490PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  IRFBF20S

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  3.1W (TA), 54W (TC)

RDS ON (MAX) @ ID, VGS:  8 OHM @ 1A, 10V

STANDARD PACKAGE:  50

SUPPLIER DEVICE PACKAGE:  D2PAK

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  4V @ 250ΜA