CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  1.4A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 1000V 1.4A (TC) 54W (TC) THROUGH HOLE TO-220AB

DRAIN TO SOURCE VOLTAGE (VDSS):  1000V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  38NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  500PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  IRFBG20PBF

MANUFACTURER STANDARD LEAD TIME:  18 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-220-3

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  54W (TC)

RDS ON (MAX) @ ID, VGS:  11 OHM @ 840MA, 10V

STANDARD PACKAGE:  50

SUPPLIER DEVICE PACKAGE:  TO-220AB

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA