CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  800MA (TA)

DETAILED DESCRIPTION:  N-CHANNEL 200V 800MA (TA) 1W (TA) THROUGH HOLE 4-DIP, HEXDIP, HVMDIP

DRAIN TO SOURCE VOLTAGE (VDSS):  200V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  14NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  260PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  IRFD220PBF

MANUFACTURER STANDARD LEAD TIME:  11 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  4-DIP (0.300", 7.62MM)

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  1W (TA)

RDS ON (MAX) @ ID, VGS:  800 MOHM @ 480MA, 10V

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  4-DIP, HEXDIP, HVMDIP

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA