CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  350MA (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  400V

FET FEATURE:  STANDARD

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  TRANSISTORS - FETS, MOSFETS - SINGLE

GATE CHARGE (QG) @ VGS:  17NC @ 10V

INPUT CAPACITANCE (CISS) @ VDS:  170PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  IRFD310PBF

MANUFACTURER STANDARD LEAD TIME:  11 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  4-DIP (0.300", 7.62MM)

PACKAGING:  TUBE

POWER - MAX:  1W

RDS ON (MAX) @ ID, VGS:  3.6 OHM @ 210MA, 10V

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  4-DIP, HEXDIP, HVMDIP

VGS(TH) (MAX) @ ID:  4V @ 250ΜA