CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  9.8A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  200V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  70NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1300PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  IRFI640G

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-220-3 FULL PACK, ISOLATED TAB

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  40W (TC)

RDS ON (MAX) @ ID, VGS:  180 MOHM @ 5.9A, 10V

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  TO-220-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  4V @ 250ΜA