CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  2.7A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 60V 2.7A (TC) 2W (TA), 3.1W (TC) SURFACE MOUNT SOT-223

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  11NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  300PF @ 25V

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  IRFL014TRPBF

MANUFACTURER STANDARD LEAD TIME:  18 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2W (TA), 3.1W (TC)

RDS ON (MAX) @ ID, VGS:  200 MOHM @ 1.6A, 10V

SUPPLIER DEVICE PACKAGE:  SOT-223

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA