CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  4.8A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 200V 4.8A (TC) 2.5W (TA), 42W (TC) SURFACE MOUNT D-PAK

DRAIN TO SOURCE VOLTAGE (VDSS):  200V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  14NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  260PF @ 25V

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  IRFR220TRPBF

MANUFACTURER STANDARD LEAD TIME:  18 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2.5W (TA), 42W (TC)

RDS ON (MAX) @ ID, VGS:  800 MOHM @ 2.9A, 10V

SUPPLIER DEVICE PACKAGE:  D-PAK

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA

ALTERNATE PARTS:  IRFR220PBF IRFR220TRRPBF