CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  11A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 500V 11A (TC) 190W (TC) THROUGH HOLE TO-262-3

DRAIN TO SOURCE VOLTAGE (VDSS):  500V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  51NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1426PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  IRFSL11N50APBF

MANUFACTURER STANDARD LEAD TIME:  18 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-262-3 LONG LEADS, I²PAK, TO-262AA

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  190W (TC)

RDS ON (MAX) @ ID, VGS:  550 MOHM @ 6.6A, 10V

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  TO-262-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA