CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  3.1A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 400V 3.1A (TC) 2.5W (TA), 42W (TC) THROUGH HOLE TO-251AA

DRAIN TO SOURCE VOLTAGE (VDSS):  400V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  20NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  350PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  IRFU320PBF

MANUFACTURER STANDARD LEAD TIME:  18 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-251-3 SHORT LEADS, IPAK, TO-251AA

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  2.5W (TA), 42W (TC)

RDS ON (MAX) @ ID, VGS:  1.8 OHM @ 1.9A, 10V

STANDARD PACKAGE:  75

SUPPLIER DEVICE PACKAGE:  TO-251AA

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA