CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  1.5A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 100V 1.5A (TC) 2W (TA), 3.1W (TC) SURFACE MOUNT SOT-223

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4V, 5V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  6.1NC @ 5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  250PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  IRLL110PBF

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  2W (TA), 3.1W (TC)

RDS ON (MAX) @ ID, VGS:  540 MOHM @ 900MA, 5V

STANDARD PACKAGE:  80

SUPPLIER DEVICE PACKAGE:  SOT-223

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±10V

VGS(TH) (MAX) @ ID:  2V @ 250ΜA

ALTERNATE PARTS:  IRLL110TRPBF