CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  4.3A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  6.1NC @ 5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  250PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  IRLR110

MANUFACTURER STANDARD LEAD TIME:  12 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  2.5W (TA), 25W (TC)

RDS ON (MAX) @ ID, VGS:  540 MOHM @ 2.6A, 5V

STANDARD PACKAGE:  50

SUPPLIER DEVICE PACKAGE:  D-PAK

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  2V @ 250ΜA